مرکز منطقه ای اطلاع رساني علوم و فناوري - Sub 0.1-/spl mu/m Pattern Fabrication Using a 193-nm TSI Process

DocumentCode :

330658

Title :

Sub 0.1-/spl mu/m Pattern Fabrication Using a 193-nm TSI Process

Author :

Mori, Shigeyasu ; Kuhara, Koichi ; Morisawa, Taku ; Matsuzawa, Nobuyuki ; Kalmoto, Y. ; Endo, Masayuki ; Matsuo, Takahiro ; Sasago, Masaru

Author_Institution :

Yokohama Research Center Association of Super-Advanced Electronics Technologies (ASET)

fYear :

1998

fDate :

13-16 July 1998

Firstpage :

104

Lastpage :

105

Keywords :

Chemicals; Chromium; Dry etching; Fabrication; Lithography; Plasma applications; Plasma chemistry; Resists; Space technology; Substrates;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Microprocesses and Nanotechnology Conference, 1998 International

Conference_Location :

Kyoungju, South Korea

Print_ISBN :

4-930813-83-2

Type :

conf

DOI :

10.1109/IMNC.1998.729993

Filename :

729993

Link To Document :