Title :
Growth of indium phosphide by solid source molecular beam epitaxy
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
For the InP solid source molecular beam epitaxy it is shown that P/sub 4/ tetramers are at least 20 times less effective at incorporating into the InP lattice than P/sub 2/ dimers. The P/sub 2/ incorporation rate remains approximately constant for fixed incident flux in the normal temperature regime for growth between approximately=480-520 degrees C, but the morphology of the
Keywords :
III-V semiconductors; carrier density; carrier mobility; chemical beam epitaxial growth; indium compounds; semiconductor epitaxial layers; semiconductor growth; surface structure; 480 to 520 degC; InP; P/sub 2/ dimers; P/sub 4/ tetramers; electron densities; incorporation rate; morphology; normal temperature regime; peak mobilities; solid source molecular beam epitaxy; thick layers; Electron mobility; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Solids; Substrates; Surface morphology; Surface reconstruction; Switches; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235559
