Title :
High performance InGaAs/InAlAs MQW laser diodes grown by gas source molecular beam epitaxy
Author :
Iwamura, H. ; Uenohara, H. ; Wakatsuki, A. ; Kawamura, Y.
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
Abstract :
The authors report high-performance InGaAs/InAlAs MQW (multiquantum well) laser diodes grown by gas source molecular beam epitaxy. The cladding layers are composed of InP layers and the SCH layers are composed of InGaAsP layers, which makes it possible to fabricate a BH (buried heterostructure) MQW structure and DFB (distributed feedback) MQW structure. The threshold current for an HR coated diode was measured to be 3.5 mA. The relaxation oscillation frequency of MQW laser diodes was measured from the resonant peak appearing in the intensity noise spectrum, and the enhancement of relaxation oscillation frequency was demonstrated. The authors also fabricated DFB MQW lasers and demonstrated that the InGaAs/InAlAs MQWs with InGaAsP SCH are promising for high-bit-rate optical communication systems.<>
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; indium compounds; semiconductor growth; semiconductor lasers; 3.5 mA; BH MQW structure; DFB MQW structure; HR coated diode; InGaAs-InAlAs; InGaAs/InAlAs MQW laser diodes; InGaAsP; InP layers; SCH layers; cladding layers; gas source molecular beam epitaxy; high-bit-rate optical communication systems; high-performance; intensity noise spectrum; multiquantum well; relaxation oscillation frequency; resonant peak; threshold current; Current measurement; Diode lasers; Distributed feedback devices; Frequency; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Quantum well devices; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235562
