Sub-mA threshold operation of lambda =1.5 mu m strained InGaAs multiple quantum well lasers grown on

Author

Thijs, P.J.A. ; Binsma, J.J.M. ; Tiemeijer, L.F. ; Slootweg, R.W.M. ; van Roijen, R. ; Van Dongen, T.

Author_Institution

Philips Optoelectron. Centre, Eindhoven, Netherlands

fYear

1992

fDate

21-24 April 1992

Firstpage

461

Lastpage

464

Abstract

1.5- mu m wavelength In/sub x/Ga/sub 1-x/As/InGaAsP (x=0.7, resulting in 1.2% compressive strain and x=0.53, resulting in zero strain) multiple quantum well (MQW) structures were grown on

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.5 micron; InGaAs-InGaAsP; InP; LP-OMVPE; MQW structures; device quality; high quality; low-pressure organometallic vapor phase epitaxy; luminescence peaks; room temperature photoluminescence; semi-insulating current blocking layers; strained InGaAs multiple quantum well lasers; sub-mA threshold operation; sub-milliampere threshold current buried heterostructure lasers; substrate orientations; threshold current densities; unstrained MQW structures; Capacitive sensors; Effective mass; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Optoelectronic devices; Quantum well devices; Quantum well lasers; Substrates; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235564

Filename

235564