Title :
Low threshold 1.5 mu m quaternary quantum well lasers grown by MOCVD
Author :
Grodzinski, P. ; Osinski, J.S. ; Zou, Y. ; Mathur, A. ; Dapkus, P.D.
Author_Institution :
Dept. of Mater. Sci. & Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Long-wavelength lasers containing quantum wells (QWs) with compressive strain in the range of 0-1.8% have been grown by atmospheric pressure MOCVD (metal-organic chemical vapor deposition). An ultralow threshold current density of 140 A/cm/sup 2/ at a cavity length of 3.5 mm and very low internal losses of 3.5/cm have been measured for single InGaAsP ( epsilon =1.8%) QW structures. Four QW structures employing quaternary QWs with 0.9% compressive strain exhibited a threshold current density of 324 A/cm/sup 2/ at a cavity length of 1.5 mm. Improvements in low-threshold operation with respect to devices containing strained InGaAs QWs are achieved due to the application of wider quaternary QWs than obtainable for InGaAs with a comparable value of strain. Strained QW lasers exhibited higher modal gain than lattice-matched QW lasers. Double QW structures with lattice-matched wells have operated with a threshold current density of 313 A/cm/sup 2/.<>
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.5 micron; 1.5 mm; 3.5 mm; InGaAsP; VPE; atmospheric pressure MOCVD; cavity length; compressive strain; double QW structures; lattice-matched wells; long wavelength lasers; low threshold; metal-organic chemical vapor deposition; modal gain; quaternary quantum well lasers; single InGaAsP QW; ultralow threshold current density; very low internal losses; Atmospheric measurements; Capacitive sensors; Chemical lasers; Chemical vapor deposition; Current measurement; Density measurement; Indium gallium arsenide; MOCVD; Quantum well lasers; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235567
