Title :
A novel InAlAs/InP/InAlAs pnp double heterojunction bipolar transistor grown by MBE
Author :
Fathimulla, A. ; Hier, H. ; Gutierrez, D. ; Potter, R. ; Abrahams, J.
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD, USA
Abstract :
The authors report the growth and fabrication of a double-heterojunction bipolar transistor (DHBT) using the InP/InAlAs material system. The measured Gummel plot exhibits a collector current ideality factor of 1.25 and a base current ideality factor of 1.5. A collector-emitter breakdown voltage of 6.5 V was measured. From the measured S-parameters, the extrapolated current-gain-cut-off frequency for a 5- mu m*5- mu m size device was 6.5 GHz. The results obtained indicate that the InP/InAlAs heterostructure grown by molecular beam epitaxy is suitable for p-n-p HBTs (heterojunction bipolar transistors).<>
Keywords :
S-parameters; aluminium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; 6.5 GHz; 6.5 V; DHBT; Gummel plot; InAlAs-InP-InAlAs; MBE; S-parameters; base current ideality factor; collector current ideality factor; collector-emitter breakdown voltage; double-heterojunction bipolar transistor; fabrication; growth; p-n-p DHBT; Bipolar transistors; Current measurement; Fabrication; Frequency measurement; Heterojunctions; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Scattering parameters; Size measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235569
