Title :
Memory Effect Involving Fib-Induced Ga-Nanocrystals In GaAs/AIGaAs Heterojunction FETs
Author :
Kim, Hoon ; Noda, Takeshi ; Sakaki, Hiroyuki
Author_Institution :
Research Center for Advanced Science and Technology, University of Tokyo
Keywords :
Electrons; FETs; Gallium arsenide; Heterojunctions; Hysteresis; Molecular beam epitaxial growth; Nanocrystals; Temperature; Tunneling; Voltage control;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
DOI :
10.1109/IMNC.1998.730017
