Status and potential of AlInAs/GaInAs/InP HBT ICs

Author

Stanchina, W.E. ; Jensen, J.F. ; Metzger, R.A. ; Hafizi, M.E. ; Rensch, D.B.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

434

Lastpage

437

Abstract

The authors review the rapid development of AlInAs/GaInAs/InP IC technology in the US and describe some of the potential payoffs offered by this technology. It is pointed out that AlInAs/GaInAs/InP HBT (heterojunction bipolar transistor) ICs have made significant strides in a short time to demonstrate the feasibility and potential for high-performance ICs based on this technology. While record-setting IC speed has been the predominant measure of success, new benchmarks will probably emerge over the next couple years including device and IC reliability, lower IC power dissipation, higher levels of integration, and improved characteristics through double HBTs. These will enable the technology to establish its own niche within the overall and rapidly improving bipolar IC arena.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; indium compounds; AlInAs-GaInAs-InP; AlInAs/GaInAs/InP HBT ICs; IC speed; double HBT; heterojunction bipolar transistor; high-performance; lower IC power dissipation; reliability; Bandwidth; Bipolar integrated circuits; Feedback amplifiers; Gain; Heterojunction bipolar transistors; Indium phosphide; MODFET circuits; Mixers; Molecular beam epitaxial growth; Optical receivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235571

Filename

235571