Title :
Status and potential of AlInAs/GaInAs/InP HBT ICs
Author :
Stanchina, W.E. ; Jensen, J.F. ; Metzger, R.A. ; Hafizi, M.E. ; Rensch, D.B.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
The authors review the rapid development of AlInAs/GaInAs/InP IC technology in the US and describe some of the potential payoffs offered by this technology. It is pointed out that AlInAs/GaInAs/InP HBT (heterojunction bipolar transistor) ICs have made significant strides in a short time to demonstrate the feasibility and potential for high-performance ICs based on this technology. While record-setting IC speed has been the predominant measure of success, new benchmarks will probably emerge over the next couple years including device and IC reliability, lower IC power dissipation, higher levels of integration, and improved characteristics through double HBTs. These will enable the technology to establish its own niche within the overall and rapidly improving bipolar IC arena.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; indium compounds; AlInAs-GaInAs-InP; AlInAs/GaInAs/InP HBT ICs; IC speed; double HBT; heterojunction bipolar transistor; high-performance; lower IC power dissipation; reliability; Bandwidth; Bipolar integrated circuits; Feedback amplifiers; Gain; Heterojunction bipolar transistors; Indium phosphide; MODFET circuits; Mixers; Molecular beam epitaxial growth; Optical receivers;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235571
