مرکز منطقه ای اطلاع رساني علوم و فناوري - Fabrication Of A Mosfet With Self-aligned Nanogate Electrode Based On Dual-functional MoO<sub>3</sub>WO<sub>3</sub> Bilayer Resist

DocumentCode :

330687

Title :

Fabrication Of A Mosfet With Self-aligned Nanogate Electrode Based On Dual-functional MoO₃WO₃ Bilayer Resist

Author :

Hashimoto, M. ; Koreeda, T. ; Koshida, N. ; Komuro, M. ; Atoda, N.

Author_Institution :

Tokyo University of Agriculture and Technology

fYear :

1998

fDate :

13-16 July 1998

Firstpage :

162

Lastpage :

163

Keywords :

Electrodes; Etching; Fabrication; Heat treatment; Ion beams; MOSFET circuits; Resists; Scanning electron microscopy; Semiconductor films; Substrates;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Microprocesses and Nanotechnology Conference, 1998 International

Conference_Location :

Kyoungju, South Korea

Print_ISBN :

4-930813-83-2

Type :

conf

DOI :

10.1109/IMNC.1998.730024

Filename :

730024

Link To Document :