Title :
A bias controlled HBT MMIC power amplifier with improved PAE for PCS applications
Author :
Kim, Ji H. ; Kim, Ji H. ; Noh, Y.S. ; Park, C.S.
Author_Institution :
Sch. of IT Eng., Inf. & Commun. Univ., Daejeon, South Korea
Abstract :
This paper demonstrates a high-efficiency HBT MMIC power amplifier with a new bias control circuit, which effectively reduces a quiescent current for improved power-added efficiency (PAE). The bias control circuit improved the PAE by a factor of 1.3 for output power of less than 16 dBm and is integrated monolithically with the amplifier, and consumes negligibly small dc power. The PCS power amplifier employing the bias control circuit shows 16(28) dBm of an output power with 7.8(35.2)% of PAE, -46(-45) dBc of adjacent-channel-power ratio (ACPR), and 23.9(28.3) dB of gain, depending on low (high) output power levels under a supply voltage of 3.4 V.
Keywords :
MMIC power amplifiers; bipolar MMIC; code division multiple access; heterojunction bipolar transistors; mobile radio; personal communication networks; 23.9 dB; 28.3 dB; 3.4 V; 35.2 percent; 7.8 percent; MMIC power amplifier; PAE; PCS applications; adjacent-channel-power ratio; bias controlled HBT; output power; power-added efficiency; quiescent current; supply voltage; Circuits; Communication system control; Heterojunction bipolar transistors; High power amplifiers; MMICs; Multiaccess communication; Personal communication networks; Power amplifiers; Power generation; Voltage control;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187803
