Analysis of damage during InP hydrocarbon-RIE

Author

Morito, K. ; Matsuda, M. ; Ishikawa, H. ; Wada, O.

Author_Institution

Fujitsu Labs. Ltd., Kanagawa, Japan

fYear

1992

fDate

21-24 April 1992

Firstpage

427

Lastpage

430

Abstract

The authors report a detailed determination of the structure of damage formed by CH/sub 4/-RIE (reactive ion etching) of InP, using a combination of three different characterization techniques for chemical, physical, and optical properties. X-ray photoelectron spectroscopy (XPS) and Rutherford back scattering (RBS) techniques were employed for the characterization of the chemical and physical structure of the damage. Photoluminescence (PL) measurement was performed at 4.2 K for optical characterization. The results obtained demonstrate the layered structure of the damage and also indicate the recovery of optical damage due to hydrogen passivation and high-temperature annealing.<>

Keywords

III-V semiconductors; Rutherford backscattering; X-ray photoelectron spectra; indium compounds; luminescence of inorganic solids; photoluminescence; sputter etching; 4.2 K; H/sub 2/ passivation; InP; Rutherford back scattering; X-ray photoelectron spectroscopy; chemical structure; damage structure; high-temperature annealing; hydrocarbon-RIE; hydrogen passivation; layered structure; methane; optical properties; photoluminescence; physical structure; reactive ion etching; Chemicals; Etching; Hydrogen; Indium phosphide; Optical scattering; Particle beam optics; Performance evaluation; Photoluminescence; Spectroscopy; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235573

Filename

235573