Title :
Analysis of damage during InP hydrocarbon-RIE
Author :
Morito, K. ; Matsuda, M. ; Ishikawa, H. ; Wada, O.
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
The authors report a detailed determination of the structure of damage formed by CH/sub 4/-RIE (reactive ion etching) of InP, using a combination of three different characterization techniques for chemical, physical, and optical properties. X-ray photoelectron spectroscopy (XPS) and Rutherford back scattering (RBS) techniques were employed for the characterization of the chemical and physical structure of the damage. Photoluminescence (PL) measurement was performed at 4.2 K for optical characterization. The results obtained demonstrate the layered structure of the damage and also indicate the recovery of optical damage due to hydrogen passivation and high-temperature annealing.<>
Keywords :
III-V semiconductors; Rutherford backscattering; X-ray photoelectron spectra; indium compounds; luminescence of inorganic solids; photoluminescence; sputter etching; 4.2 K; H/sub 2/ passivation; InP; Rutherford back scattering; X-ray photoelectron spectroscopy; chemical structure; damage structure; high-temperature annealing; hydrocarbon-RIE; hydrogen passivation; layered structure; methane; optical properties; photoluminescence; physical structure; reactive ion etching; Chemicals; Etching; Hydrogen; Indium phosphide; Optical scattering; Particle beam optics; Performance evaluation; Photoluminescence; Spectroscopy; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235573
