Title :
Modeling, design and performance of InP/InGaAs double-heterojunction bipolar transistors
Author :
Parrilla, M. ; Newson, D. ; Skellern, D. ; MacBean, M.
Author_Institution :
Sch. of MPCE, Macquarie Univ., Sydney, NSW, Australia
Abstract :
The authors present measurements of InP/InGaAs double-heterojunction bipolar transistors (DHBTs) where the design has been guided by simulation results from energy-band and small-signal models. Both the energy-band model and small-signal model commence with the material parameters, process parameters, and device geometry. The energy-band model is used to investigate the insertion of layers to reduce the electron-blocking effect at the base-collector conduction-band discontinuity. The small-signal model is used to optimize the layer structure to provide a high unity-gain bandwidth, f/sub T/. The fabricated devices range in size from 60 mu m*60 mu m to 9 mu m*9 mu m (emitter size). The 9- mu m*9- mu m devices exhibit a small-signal current-gain in excess of 400 and a maximum f/sub T/ of 39 GHz. The measured high-frequency performance agrees closely with the simulation results of the small-signal model.<>
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; solid-state microwave devices; 39 GHz; InP-InGaAs; base-collector conduction-band discontinuity; design; device geometry; double-heterojunction bipolar transistors; electron-blocking effect; energy-band model; high unity-gain bandwidth; high-frequency performance; layer insertion; small-signal current-gain; small-signal model; Bipolar transistors; Breakdown voltage; Capacitance; Double heterojunction bipolar transistors; Electric breakdown; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Solid modeling;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235576
