Title :
InP based HBTs-technology, performance and applications
Author :
Fiedler, F. ; Mause, K. ; Pitz, G. ; Fritzsche, D. ; Kuphal, E. ; Krautle, H.
Author_Institution :
Deutsche Bundespost Telekom, Darmstadt, Germany
Abstract :
An overview is given of the research activities and the state of development of InGaAs(P)/InP and InAlAs/InGaAs/InP HBTs (heterojunction bipolar transistors) in Europe. Although only a few groups are working on InP-based HBTs, reasonable device performance has been achieved. Nearly all the results on InP-based HBTs are from groups whose aim is to integrate these devices in OEICs (optoelectronic integrated circuits) for optical communication systems in the wavelength range from 1.3 to 1.55 mu m. The good results obtained indicate that, after solving some problems like surface passivation, material selective dry etching, and planarization, the high-speed potential of InP-based HBTs can be made commercially available.<>
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; research initiatives; reviews; 1.3 to 1.55 micron; Europe; InAlAs-InGaAs-InP; InGaAs-InP; InGaAsP-InP; InP based HBT technology; device performance; heterojunction bipolar transistors; high-speed potential; material selective dry etching; optical communication systems; optoelectronic integrated circuits; overview; planarization; research activities; surface passivation; Europe; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Optical materials; Optical surface waves; Passivation; Photonic integrated circuits;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235578
