Title :
Selective wet etching for InGaAs/InAlAs/InP heterostructure field-effect transistors
Author :
Tong, M. ; Ketterson, A.A. ; Nummila, K. ; Adesida, I. ; Aina, L. ; Mattingly, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
The etching characteristics of InAlAs, InGaAs, and InP in citric acid/H/sub 2/O/sub 2/ solutions, and their applications to the fabrication of InAlAs/InGaAs/InP MODFETs are reported. High selectivities of up to 500 and 187 were obtained for InGaAs over InP and InAlAs over InP, respectively. Selectivity values ranging from 2.5 to 25 were achieved for InGaAs over InAlAs with citric acid/H/sub 2/O/sub 2/ solution ratio from 10 to 1. The activation energies for these materials and the etch profiles for a InGaAs/InAlAs/InP MODFET structure are reported. Citric acid/H/sub 2/O/sub 2/ solutions of appropriate ratios have been applied to both mesa etching and gate recessing with good results. These solutions may also be extended to the fabrication of InAlAs/InGaAs and InP/InGaAs heterojunction bipolar transistors.<>
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; InAlAs-InGaAs; InGaAs-InAlAs-InP; InGaAs-InP; MODFETs; activation energies; citric acid/H/sub 2/O/sub 2/ solutions; etch profiles; etching characteristics; fabrication; gate recessing; heterojunction bipolar transistors; heterostructure field-effect transistors; mesa etching; selective wet etching; selectivity; Dry etching; Epitaxial layers; Fabrication; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFET integrated circuits; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235581
