Title :
1.2-μM non-epi CMOS smart power IC with four H-bridge motor drivers for portable applications
Author :
Kim, Boeun ; Kim, I. Cheolwoo ; Han, Sangchan ; Kim, Soowon ; Park, Hoonsoo ; Park, Hunsub
Author_Institution :
Dept. of Electron. Eng., Korea Univ., Seoul, South Korea
Abstract :
A smart power IC is designed with lateral DMOSFETs and fabricated in 1.2-μm non-epi CMOS process. Since digitally controlled PWM scheme is utilized with a high-speed clock frequency, the designed smart IC is suitable for high-speed CD-ROM applications which require fast tracking and high-precision motor control. The smart power IC also combines a step-down DC-to-DC converter and a linear regulator which has a zero fold-back current capability. A self-isolated lateral DMOSFET cell with minimum process change is realized with a pitch size of 16 μm which results to an extremely low specific on-resistance of 0.39 mΩ-cm 2. The active die area occupies 19.1 mm2
Keywords :
CMOS integrated circuits; DC motor drives; bridge circuits; driver circuits; power integrated circuits; 1.2 micron; CD-ROM; H-bridge motor driver; active die area; control; digitally controlled PWM; fold-back current; high-speed clock; linear regulator; nonepi CMOS process; portable applications; self-isolated lateral DMOSFET; smart power IC; specific on-resistance; step-down DC-to-DC converter; tracking; Application specific integrated circuits; CMOS process; Clocks; Digital control; Digital integrated circuits; Frequency; High speed integrated circuits; Power integrated circuits; Process control; Pulse width modulation;
Conference_Titel :
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3073-0
DOI :
10.1109/ISCAS.1996.540027
