DocumentCode
330707
Title
Effect of Boron-Implantation on the Strain-Relaxation of Pseudomorphic Metastable Ge/sub 0.06/Si/sub 0.94/ Alloy Layers
Author
Oh, M.S. ; Im, S. ; Kim, H.B. ; Song, J.H.
Author_Institution
Yonsei University
fYear
1998
fDate
13-16 July 1998
Firstpage
202
Lastpage
203
Keywords
Annealing; Capacitive sensors; Degradation; Doping; Germanium silicon alloys; Ion implantation; Materials science and technology; Metastasis; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location
Kyoungju, South Korea
Print_ISBN
4-930813-83-2
Type
conf
DOI
10.1109/IMNC.1998.730044
Filename
730044
Link To Document