DocumentCode :
330707
Title :
Effect of Boron-Implantation on the Strain-Relaxation of Pseudomorphic Metastable Ge/sub 0.06/Si/sub 0.94/ Alloy Layers
Author :
Oh, M.S. ; Im, S. ; Kim, H.B. ; Song, J.H.
Author_Institution :
Yonsei University
fYear :
1998
fDate :
13-16 July 1998
Firstpage :
202
Lastpage :
203
Keywords :
Annealing; Capacitive sensors; Degradation; Doping; Germanium silicon alloys; Ion implantation; Materials science and technology; Metastasis; Silicon germanium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
Type :
conf
DOI :
10.1109/IMNC.1998.730044
Filename :
730044
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=330707
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