Surface passivation of InP by in-situ dry process using PH/sub 3/-plasma and Se vapor

Author

Sugino, T. ; Goda, K. ; Okitani, H. ; Shirafuji, J.

Author_Institution

Dept. of Electr. Eng., Osaka Univ., Japan

fYear

1992

fDate

21-24 April 1992

Firstpage

290

Lastpage

293

Abstract

An in-situ dry process consisting of phosphine (PH/sub 3/)-plasma and selenium (Se) vapor treatments has been demonstrated to be effective in passivating the surface of InP. A significant dependence of the barrier height on metal work function is observed for Schottky junctions formed on the passivated surface of InP, suggesting that the Fermi level pinning is weakened by this process. It is demonstrated, moreover, that the improved interface of SiN/sub x//n-InP diodes is achieved by the present process, resulting in an interface state density as low as 7.5*10/sup 10/ eV/sup -1/ cm/sup -2/.<>

Keywords

III-V semiconductors; Schottky effect; Schottky-barrier diodes; indium compounds; interface electron states; passivation; silicon compounds; work function; Fermi level pinning; InP; PH/sub 3/ plasma treatment; Schottky junctions; Se vapour treatment; SiN/sub x/-InP; barrier height; diodes; in-situ dry process; interface state density; metal work function; Atomic layer deposition; Coils; Electrodes; Etching; Indium phosphide; Inductors; Interface states; Passivation; Radio frequency; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235583

Filename

235583