DocumentCode

330708

Title

The origin of photoluminescence In Ge - implanted SiO/sub 2/ layer

Author

Kim, H.B. ; Chae, K.H. ; Whang, C.N. ; Yeong, J.Y. ; Oh, M.S. ; Im, S. ; Song, J.H.

Author_Institution

Yonsei University

fYear

1998

fDate

13-16 July 1998

Firstpage

204

Lastpage

205

Keywords

Annealing; Bonding; Integrated circuit technology; Ion implantation; Luminescence; Nanocrystals; Nitrogen; Photoluminescence; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1998 International

Conference_Location

Kyoungju, South Korea

Print_ISBN

4-930813-83-2

Type

conf

DOI

10.1109/IMNC.1998.730045

Filename

730045