Title :
Arsenic-phosphorus exchange during the formation of InAlAs/InP interfaces
Author :
Brasil, M.J.S.P. ; Nahory, R.E. ; Tamargo, M.C. ; Quinn, W.E. ; Aspnes, D.E. ; Farrell, H.H. ; Hwang, D.M. ; Philips, B.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
The authors have studied the formation of InAlAs/InP interfaces grown by organometallic-MBE (molecular-beam epitaxy). They analyzed the photoluminescence emission at 5 K of a series of InAlAs/InP samples with different interface growth procedures, taking advantage of recombination across the type II interface which is very sensitive to the interface characteristics. Samples grown with different growth-halts, special interfaces with thin binary layers between the InP and InAlAs layers, and InP samples with an intermediate surface exposure to As/sub 2/ were investigated. TEM (transmission electron microscopy) and ellipsometry measurements are presented. The results are interpreted in terms of a P-As exchange effect during the InAlAs/InP formation. The most stable interface is obtained with the incorporation of a thin AlP interfacial layer, which can be understood by bond strength considerations.<>
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; ellipsometry; indium compounds; interface structure; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor growth; transmission electron microscope examination of materials; 5 K; InAlAs-InP; P-As exchange effect; TEM; bond strength; ellipsometry; interface formation; interface growth procedures; intermediate surface exposure; molecular-beam epitaxy; organometallic-MBE; photoluminescence emission; thin AlP interfacial layer; thin binary layers; transmission electron microscopy; type II interface; Bonding; Electrons; Ellipsometry; Impurities; Indium compounds; Indium phosphide; Photoluminescence; Springs; Switches; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235584
