• DocumentCode
    330711
  • Title

    Characterization Of The Nitrided GaAs Thin Layers After Rapid Thermal Annealing By Using Raman Scattering

  • Author

    Koh, Eui Kwan ; Park, Young Ju ; Kim, Eun Kyu ; Choh, Sung Ho

  • Author_Institution
    Korea University
  • fYear
    1998
  • fDate
    13-16 July 1998
  • Firstpage
    210
  • Lastpage
    211
  • Keywords
    Bandwidth; Frequency; Gallium arsenide; Phonons; Physics; Plasma properties; Plasma temperature; Raman scattering; Rapid thermal annealing; Semiconductor materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 1998 International
  • Conference_Location
    Kyoungju, South Korea
  • Print_ISBN
    4-930813-83-2
  • Type

    conf

  • DOI
    10.1109/IMNC.1998.730048
  • Filename
    730048
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=330711