330719

Effects Of Post Annealing And Oxidation Processes On The Removal Of Damage Generated During The Shallow Trench Etch Process

Lee, Y.L. ; Hwang, S.W. ; Lee, J.W. ; Lee, J.Y. ; Yeom, G.Y.

Sung Kyun Kwan University

1998

13-16 July 1998

228

230

Annealing; Capacitance measurement; Capacitance-voltage characteristics; Couplings; Electric variables measurement; Etching; Oxidation; Plasma applications; Schottky diodes; Silicon;

English

ieee

Microprocesses and Nanotechnology Conference, 1998 International

Kyoungju, South Korea

4-930813-83-2

conf

10.1109/IMNC.1998.730057

730057