New Terahertz Mixer Based on Resonant-Tunneling Diode

Author

Alkeev, N.V. ; Averin, S.V. ; Dorofeev, A.A. ; Golant, E.I. ; Pashkovskii, A.B.

Author_Institution

Inst. of Radioengineering & Electron. RAS, Fryazino

Volume

1

fYear

2007

fDate

25-30 June 2007

Firstpage

192

Lastpage

194

Abstract

This work shows that the electron transport mechanism in a resonant-tunneling diode (RTD) define RTD noise properties and it´s operation speed. Optimization for two types of heterostructures: matched - In_0.53Ga_0.47As/In_0.52Al_0.48As and pseudomorphic -In_0.53Ga_0.47As/AlAs, are carried out. Results show that properly designed RTD will have essential nonlinearity at zero bias and can be successfully employed as an active element of terahertz subharmonic mixer.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; resonant tunnelling diodes; semiconductor device noise; semiconductor heterojunctions; submillimetre wave mixers; In_0.53Ga_0.47As-AlAs; In_0.53Ga_0.47As-In_0.52Al_0.48As; RTD noise; electron transport mechanism; matched heterostructure; nonlinearity; pseudomorphic heterostructure; resonant tunneling diode; terahertz subharmonic mixer; Electron emission; Frequency; Nanoscale devices; Photonic band gap; Research and development; Resonance; Resonant tunneling devices; Semiconductor devices; Semiconductor diodes; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on

Conference_Location

Kharkov

Print_ISBN

1-4244-1237-4

Type

conf

DOI

10.1109/MSMW.2007.4294605

Filename

4294605