Title :
New Terahertz Mixer Based on Resonant-Tunneling Diode
Author :
Alkeev, N.V. ; Averin, S.V. ; Dorofeev, A.A. ; Golant, E.I. ; Pashkovskii, A.B.
Author_Institution :
Inst. of Radioengineering & Electron. RAS, Fryazino
Abstract :
This work shows that the electron transport mechanism in a resonant-tunneling diode (RTD) define RTD noise properties and it´s operation speed. Optimization for two types of heterostructures: matched - In0.53Ga0.47As/In0.52Al0.48As and pseudomorphic -In0.53Ga0.47As/AlAs, are carried out. Results show that properly designed RTD will have essential nonlinearity at zero bias and can be successfully employed as an active element of terahertz subharmonic mixer.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; resonant tunnelling diodes; semiconductor device noise; semiconductor heterojunctions; submillimetre wave mixers; In0.53Ga0.47As-AlAs; In0.53Ga0.47As-In0.52Al0.48As; RTD noise; electron transport mechanism; matched heterostructure; nonlinearity; pseudomorphic heterostructure; resonant tunneling diode; terahertz subharmonic mixer; Electron emission; Frequency; Nanoscale devices; Photonic band gap; Research and development; Resonance; Resonant tunneling devices; Semiconductor devices; Semiconductor diodes; Temperature;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1237-4
DOI :
10.1109/MSMW.2007.4294605
