Theoretical study of THz radiation in the low-temperature grown GaAs

Author

Liu, Dongfeng ; Yuan, Xiaohua ; Qin, Jiayin

Author_Institution

Dept. of Electron. & Commun. Eng., Zhongshan Univ., Guangzhou, China

fYear

2002

fDate

17-19 Aug. 2002

Firstpage

833

Lastpage

836

Abstract

Through theoretical modeling, we find the carrier transports on the surface of the semiconductor play a very important role, shaping the temporal waveform of THz radiation pulses emitted from biased low-temperature (LT) grown GaAs antennas. Our research also displays that electron-hole collisions in LT-GaAs contributes to the saturation phenomenon with the increase of laser fluence.

Keywords

III-V semiconductors; carrier lifetime; carrier mobility; gallium arsenide; infrared sources; photoconducting devices; photoexcitation; semiconductor device models; submillimetre wave antennas; submillimetre wave generation; surface recombination; GaAs; LT-GaAs electron-hole collisions; THz emitters; THz radiation emission; biased LT grown GaAs antennas; carrier lifetimes; carrier mobility; laser fluence saturation phenomenon; low-temperature grown GaAs; photoconducting antennas; photoexcited carriers; semiconductor surface carrier transports; temporal waveform shaping; Charge carrier lifetime; Conductivity; Gallium arsenide; Optical pulses; Optical refraction; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Surface waves; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Print_ISBN

0-7803-7486-X

Type

conf

DOI

10.1109/ICMMT.2002.1187830

Filename

1187830