Title :
Theoretical study of THz radiation in the low-temperature grown GaAs
Author :
Liu, Dongfeng ; Yuan, Xiaohua ; Qin, Jiayin
Author_Institution :
Dept. of Electron. & Commun. Eng., Zhongshan Univ., Guangzhou, China
Abstract :
Through theoretical modeling, we find the carrier transports on the surface of the semiconductor play a very important role, shaping the temporal waveform of THz radiation pulses emitted from biased low-temperature (LT) grown GaAs antennas. Our research also displays that electron-hole collisions in LT-GaAs contributes to the saturation phenomenon with the increase of laser fluence.
Keywords :
III-V semiconductors; carrier lifetime; carrier mobility; gallium arsenide; infrared sources; photoconducting devices; photoexcitation; semiconductor device models; submillimetre wave antennas; submillimetre wave generation; surface recombination; GaAs; LT-GaAs electron-hole collisions; THz emitters; THz radiation emission; biased LT grown GaAs antennas; carrier lifetimes; carrier mobility; laser fluence saturation phenomenon; low-temperature grown GaAs; photoconducting antennas; photoexcited carriers; semiconductor surface carrier transports; temporal waveform shaping; Charge carrier lifetime; Conductivity; Gallium arsenide; Optical pulses; Optical refraction; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Surface waves; Temperature;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187830
