Title :
New Method For Estimation Of The Grain Boundaries Contribution To The Resistance Of Highly Doped Polysilicon
Author :
Spoutai, S.V. ; Chun, H.-G.
Author_Institution :
Novosibirsk State Technical University
Keywords :
Doping; Electron devices; Grain boundaries; Grain size; Inorganic materials; Physics; Resistors; Roentgenium; Semiconductor thin films; Silicon;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
DOI :
10.1109/IMNC.1998.730070
