Title :
Enhanced Schottky barriers on n-In/sub 0.53/Ga/sub 0.47/As using p-InGaAs, GaAs, InP and InGaP surface layers
Author :
Kordos, P. ; Marso, M. ; Meyer, R. ; Luth, H.
Author_Institution :
Institut fuer Schicht- und Ionentech., Julich, Germany
Abstract :
Schottky barrier enhancement on n-InGaAs by thin surface layers of different compositions, doping levels, and thicknesses was studied. With p/sup +/-InGaAs layers with N/sub A/=1.5*10/sup 18/ cm/sup -3/, barrier height increases with layer thickness up to 0.63 eV and further increase is possible by higher doping, phi /sub B/=0.66 eV if N/sub A/=8*10/sup 18/ cm/sup -3/. With GaAs enhancement layers nonideal I-V characteristics were obtained due to th high lattice mismatch. With undoped InP and InGaP (x/sub GAP/=0.11) barrier heights up to 0.53 eV can be obtained.<>
Keywords :
III-V semiconductors; Schottky effect; gallium arsenide; indium compounds; interface structure; In/sub 0.53/Ga/sub 0.47/As; InGaAs-GaAs; InGaAs-InGaAs; InGaAs-InGaP; InGaAs-InP; Schottky barrier enhancement; barrier height; lattice mismatch; nonideal I-V characteristics; thin surface layers; Current measurement; Doping; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Insulation; Schottky barriers; Schottky diodes; Semiconductor diodes; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235597
