A high-voltage, doubly-strained In/sub 0.41/Al/sub 0.59/As/n/sup +/-In/sub 0.65/Ga/sub 0.35/As HFET

Author

Bahl, S.R. ; Bennett, B.R. ; del Alamo, J.A.

Author_Institution

MIT, Cambridge, MA, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

222

Lastpage

225

Abstract

An InAlAs/n/sup +/-InGaAs HFET (heterostructure field-effect transistor) on InP, suitable for power microwave applications, was designed and fabricated. A strained In/sub 0.65/Ga/sub 0.35/As channel is optimally doped to N/sub D/=6*10/sup 18/ cm/sup -3/. The heterostructure employs the following methodology to enhance device breakdown: (1) an ultrathin subchannel to introduce quantization and increase the effective channel bandgap, (2) a strained In/sub 0.41/Al/sub 0.59/As insulator, and (3) the elimination of parasitic mesasidewall gate-leakage. The resulting device (gate length=1.9 mu m, gate width=200 mu m) has a cutoff frequency=14.9 GHz, a maximum frequency of oscillation=101 GHz, breakdown voltage=12.8 V, and maximum drain current=302 mA/mm.<>

Keywords

III-V semiconductors; aluminium compounds; energy gap; field effect transistors; gallium arsenide; indium compounds; power transistors; solid-state microwave devices; 1.9 micron; 101 GHz; 12.8 V; 14.9 GHz; 200 micron; HFET; In/sub 0.41/Al/sub 0.59/As-In/sub 0.65/Ga/sub 0.35/As-InP; device breakdown; effective channel bandgap; heterostructure field-effect transistor; high voltage doubly strained HFET; parasitic mesasidewall gate-leakage; power microwave applications; quantization; ultrathin subchannel; Breakdown voltage; Cutoff frequency; Electric breakdown; HEMTs; Indium compounds; Indium phosphide; Insulation; MODFETs; Photonic band gap; Quantization;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235599

Filename

235599