Lateral bandgap engineering for InP-based photonic integrated circuits

Author

Coudenys, G. ; Moerman, I. ; Zhu, Y. ; Van Daele, P. ; Demeester, P.

Author_Institution

Interuniv. Microelectron. Centre, Gent Univ., Belgium

fYear

1992

fDate

21-24 April 1992

Firstpage

202

Lastpage

205

Abstract

It is demonstrated that both SMG (shadow masked growth) and SG (selective growth) together with the use of QWs (quantum wells) can change the bandgap of InP-based materials laterally over the substrate. The thickness change that can be obtained with both techniques and the corresponding deviation from stoichiometry are competitive. The authors present the basic principle of both techniques and the basic characteristics (thickness and composition change). They have fabricated a multiwavelength laser array using SMG with a wavelength span of 130 nm around 1550 nm.<>

Keywords

III-V semiconductors; energy gap; gallium arsenide; indium compounds; integrated optoelectronics; semiconductor growth; semiconductor laser arrays; semiconductor quantum wells; vapour phase epitaxial growth; 1420 to 1680 nm; InP-InGaAsP; MOCVD; lateral bandgap engineering; multiwavelength laser array; photonic integrated circuits; quantum wells; selective growth; shadow masked growth; Acoustical engineering; Acoustics; Detectors; Indium gallium arsenide; Indium phosphide; Laboratories; Microelectronics; Photonic band gap; Photonic integrated circuits; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235604

Filename

235604