Title :
GSMBE growth on patterned substrates for optoelectronic devices
Author :
Simes, R.J. ; Goarin, E.G. ; Labourie, C. ; Bonnevie, D. ; Perales, A. ; Lesterlin, D. ; Goldstein, L.
Author_Institution :
ALCATEL-ALSTHOM Recherche, Marcoussis, France
Abstract :
Some aspects of the regrowth process of InP-based materials by gas source molecular-beam epitaxy (GSMBE) are presented. The regrowth on patterned substrates with different mesa features is discussed. Two device examples which highlight lift-off technologies using either dielectric or semiconductor lift-off masks to enable selective removal of unwanted epitaxial material are presented. A process which uses GSMBE for the realization of butt-coupled laser-waveguide structures is introduced. The results obtained demonstrate a coupling efficiency of greater than 80% between passive and active waveguides and passive region losses of approximately 15 cm/sup -1/ in broad area laser structures. Additionally, using a similar process, buried-heterostructure lasers have been fabricated.<>
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; integrated optics; integrated optoelectronics; masks; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor lasers; GSMBE growth; InP; active waveguides; broad area laser structures; buried-heterostructure lasers; butt-coupled laser-waveguide structures; coupling efficiency; gas source molecular-beam epitaxy; lift-off masks; mesa features; optoelectronic devices; passive region losses; patterned substrates; regrowth process; Dielectric devices; Dielectric materials; Dielectric substrates; Molecular beam epitaxial growth; Optical coupling; Optical materials; Optoelectronic devices; Semiconductor lasers; Semiconductor materials; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235605
