Determination of Fe/sup 2+/ and Fe/sup 3+/ concentrations in semi-insulating InP:Fe

Author

Zach, F.X. ; Bourret, E.D. ; Bliss, D. ; Weber, E.R. ; Haller, E.E.

Author_Institution

Lawrence Berkeley Lab., CA, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

638

Lastpage

641

Abstract

As the Fermi level in semi-insulating InP is close to the iron acceptor level, both charge states-Fe/sup 2+/ as well as Fe/sup 3+/ corresponding to the acceptor level occupied/unoccupied by an electron-are present. W. Meier et al. (1991) presented a method based on absorption measurements in the near-bandgap region of InP to determine the concentration of both charge states separately. In the present work, the authors compare iron concentrations obtained by this method with the results from intracenter absorption, DLTS (deep level transient spectroscopy), electron paramagnetic resonance, Hall effect measurements, and glow discharge mass spectroscopy. They present a new calibration for the optical absorption cross sections.<>

Keywords

Hall effect; III-V semiconductors; deep level transient spectroscopy; impurity and defect absorption spectra of inorganic solids; impurity electron states; indium compounds; infrared spectra of inorganic solids; iron; mass spectroscopic chemical analysis; paramagnetic resonance of iron group ions and impurities; DLTS; Fe/sup 2+/ concentration; Fe/sup 3+/ concentration; Fermi level; Hall effect; InP:Fe; absorption measurements; acceptor level; calibration; charge states; electron paramagnetic resonance; glow discharge mass spectroscopy; intracenter absorption; near-bandgap region; optical absorption cross sections; semi-insulating; semiconductor; Absorption; Charge measurement; Current measurement; Electrons; Glow discharges; Hall effect; Indium phosphide; Iron; Mass spectroscopy; Paramagnetic resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235606

Filename

235606