DocumentCode :
330750
Title :
Etch Properties Of Gallium Nitride Using Chemically Assisted Ion Beam Etching (CAIBE)
Author :
Lee, W.J. ; Kim, H.S. ; Yeom, G.Y. ; Lee, J.W. ; Kim, T.I.
Author_Institution :
Sung Kyun Kwan University
fYear :
1998
fDate :
13-16 July 1998
Firstpage :
293
Lastpage :
295
Keywords :
Argon; Chemicals; Dry etching; Gallium nitride; Human computer interaction; III-V semiconductor materials; Ion beams; Plasma temperature; Sputter etching; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
Type :
conf
DOI :
10.1109/IMNC.1998.730088
Filename :
730088
Link To Document :
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