Title :
New PL emission lines in ion-implanted ultrapure LEC InP
Author :
Makita, Y. ; Yamada, A. ; Yoshinaga, H. ; Iida, T. ; Niki, S. ; Uekusa, S. ; Matsumori, T. ; Kainosho, K. ; Oda, O.
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
Abstract :
Mg/sup +/ ions were implanted into undoped liquid encapsulation Czochralski (LEC) InP having different residual net electron concentrations. Photoluminescence (PL) measurements at 2 K for ultrapure InP presented two new emissions slightly below bound exciton emissions. A sharp emission, ´g´, is formed in lightly doped InP and is ascribed to a new energy state of isolated-acceptor. A broad emission, (g-g), was observed in moderately doped InP and is attributed to acceptor-acceptor pairs. These emissions were suggested to be common occurrences in acceptor-doped III-V semiconductors and were confirmed to be easily annihilated by small amounts of donor impurities.<>
Keywords :
III-V semiconductors; impurity electron states; indium compounds; luminescence of inorganic solids; magnesium; photoluminescence; III-V semiconductors; InP; InP:Mg; acceptor-acceptor pairs; bound exciton emissions; donor impurities; ion-implanted; isolated-acceptor; liquid encapsulation Czochralski; photoluminescence emission lines; ultrapure LEC; Annealing; Electrons; Energy states; Excitons; Gallium arsenide; Indium phosphide; Ion implantation; Photoluminescence; Pollution measurement; Semiconductor impurities;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235609
