Title :
Wire-Like Doping Of Si Atoms At Multiatomic Steps On GaAs[001] Vicinal Surfaces By Metalorganic Vapor Phase Epitaxial Growth
Author :
Irisawa, Tomoki ; Motohisa, Junichi ; Akabori, Masashi ; Fukui, Takashi
Author_Institution :
Hokkaido University
Keywords :
Annealing; Atomic layer deposition; Doping; Epitaxial growth; Epitaxial layers; Fabrication; Gallium arsenide; Nanoscale devices; Semiconductor impurities; Substrates;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
DOI :
10.1109/IMNC.1998.730092
