DocumentCode

330757

Title

Electron-Beam Doping In Damageless Regions Of Semiconductors By The Kick-Out Mechanism (Intersticialcy Mechanism)

Author

Wada, T. ; Fujimoto, H. ; Tomita, Y.

Author_Institution

Daido Institute of Technology

fYear

1998

fDate

13-16 July 1998

Firstpage

307

Lastpage

308

Keywords

Atomic beams; Atomic layer deposition; Atomic measurements; Electrons; Gallium arsenide; Germanium; Samarium; Semiconductor device doping; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1998 International

Conference_Location

Kyoungju, South Korea

Print_ISBN

4-930813-83-2

Type

conf

DOI

10.1109/IMNC.1998.730095

Filename

730095