Title :
Integrated photoreceiver array using molecular beam epitaxial regrowth
Author :
Berger, P.R. ; Humphrey, D.A. ; Smith, P.R. ; Montgomery, R.K. ; Dutta, N.K. ; Sivco, D. ; Cho, A.Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A photoreceiver linear array of 8-elements each composed of a p-i-n In/sub 0.53/Ga/sub 0.47/As photodiode integrated with a selectively regrown pseudomorphic In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As modulation doped field effect transistor (MODFET) using molecular beam epitaxial (MBE) regrowth is investigated. MBE selective area regrowth enables a planarized monolithic integration with reduced parasitic capacitance over vertical monolithic integration. Cutoff frequencies (f/sub T/ and f/sub max/) of 58 GHz and 67 GHz and 24 GHz and 51 GHz were determined for as-grown and regrown MODFETs, respectively. A 3-dB bandwidth of 1 GHz was measured for the circuit. The bandwidth of the circuit is limited by the photodiode response.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; integrated circuit technology; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; photodiodes; semiconductor growth; 24 GHz; 51 GHz; 58 GHz; 67 GHz; In/sub 0.53/Ga/sub 0.47/As; In/sub 0.65/Ga/sub 0.35/As-In/sub 0.52/Al/sub 0.48/As; MBE; MODFET; bandwidth; cutoff frequencies; integrated photoreceiver array; modulation doped field effect transistor; molecular beam epitaxial; molecular beam epitaxial regrowth; p-i-n photodiode; photodiode response; planarized monolithic integration; reduced parasitic capacitance; selective area regrowth; Bandwidth; Cutoff frequency; Epitaxial layers; FETs; HEMTs; MODFET circuits; Molecular beam epitaxial growth; Monolithic integrated circuits; PIN photodiodes; Parasitic capacitance;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235615
