Title :
A Nano-Structure Memory With SOI Edge Channel And A Nano Dot
Author :
Park, Geunsook ; Han, Sangyeon ; Shin, Hyungcheol
Author_Institution :
KAIST
Keywords :
Electric variables; Electrons; Etching; Fabrication; Lithography; Nanoscale devices; Nonvolatile memory; Silicon; Threshold voltage; US Department of Transportation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
DOI :
10.1109/IMNC.1998.730099
