Fabrication technology for high performance 3-electrode quantum well DFB lasers

Author

Landgren, G. ; Nilsson, S. ; Wallin, J. ; Lourdudoss, S. ; Kjebon, O. ; Lindgren, S. ; Karlsson-Varga, D. ; Ohlander, U. ; Broberg, B.

Author_Institution

Swedish Inst. of Microelectron., Kista, Sweden

fYear

1992

fDate

21-24 April 1992

Firstpage

576

Lastpage

579

Abstract

Three-electrode DFB (distributed feedback) lasers with excellent performance and single-mode yield have been fabricated using a robust technology which includes MOVPE (metal-organic vapor-phase epitaxy) growth of quantum wells, reactive ion etching, semi-insulating regrowth by hydride VPE, and separate grating layers. Line widths below 1 MHz, modulation response over 10 GHz, and very high side mode suppression of 51 dB were achieved. The authors have fabricated and evaluated such lasers for the 1.55- mu m-wavelength region in the InGaAsP/InP materials system.<>

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; sputter etching; vapour phase epitaxial growth; 1.55 micron; InGaAsP-InP; MOVPE; distributed feedback; grating layers; high performance 3-electrode quantum well DFB lasers; hydride VPE; modulation response; reactive ion etching; semi-insulating regrowth; semiconductors; side mode suppression; single-mode yield; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Etching; Gratings; Laser feedback; Laser modes; Optical device fabrication; Quantum well lasers; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235622

Filename

235622