Title :
FinFET transistors for power analog circuits, analysis of harmonic distortion
Author :
Contreras, E. ; Granados-Luna, T. ; Perez-Sanchez, G.G. ; Rodriguez-Figueroa, R. ; Garcia Serrano, O.
Author_Institution :
Tecnol. de Estudios Super. de Coacalco Unidad de Estudios Profesionales y de Investig. Estado de Mexico, Coacalco, Mexico
Abstract :
This work present a study of the Harmonic distortion analysis in analog circuits using DC analysis, and it is evaluated the use of the Integral Function Method for the analysis in power electronics, since the use of electronic systems with finFET transistors in power systems could give advantages over traditional systems. Harmonic distortion can have detrimental effects on electronic circuits; unwanted distortion can increase the current in power systems. The power quality of distribution systems has a drastic effect on consumption and power regulation, and the power quality of distribution depends on the power electronic sources than can cause distortion in waveforms of the power system.
Keywords :
MOSFET; analogue circuits; harmonic distortion; power electronics; power supply quality; FinFET transistor; harmonic distortion analysis; integral function method; power analog circuits; power quality; power system waveform; Analog circuits; FinFETs; Harmonic distortion; Mathematical model; Mirrors; Integral Function Method; Verilog-A; analog; harmonic distortion;
Conference_Titel :
Power Electronics and Power Quality Applications (PEPQA), 2015 IEEE Workshop on
Conference_Location :
Bogota
DOI :
10.1109/PEPQA.2015.7168221