Title :
A contribution to electrochemical C-V measurements on GaAs/GaAlAs multilayer structures
Author :
Kinder, R. ; Nemcsics, Å ; Harman, R. ; Riesz, F. ; Pécz, B.
Author_Institution :
Fac. of Electr. Eng. & Inf., Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
GaAs/GaAlAs multilayer structures are investigated by ECV technique on this paper. Two different MBE sample were used for investigation. The sample have a GaAs/GaAlAs junction. One sample is a HBT structure, the other one is a p-i-n photodiode structure. The multilayer structures were tested with different aqueous electrolytes and the ECV results were controlled by SR and TEM measurement, too
Keywords :
III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; heterojunction bipolar transistors; p-i-n photodiodes; semiconductor device measurement; semiconductor junctions; semiconductor-electrolyte boundaries; GaAs-GaAlAs; GaAs/GaAlAs multilayer structure; HBT; MBE; aqueous electrolyte; carrier concentration profile; electrochemical capacitance-voltage measurement; p-i-n photodiode; Capacitance-voltage characteristics; Current measurement; Electrical resistance measurement; Electrodes; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Nonhomogeneous media; Strontium; Substrates;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730202
