Title :
Reduction of defect densities of variously doped InP
Author :
Hirano, R. ; Kanazawa, T. ; Nakamura, M.
Author_Institution :
Nippon Mining Co. Ltd., Saitama, Japan
Abstract :
The authors have developed a simple method for reducing dislocation densities of 2-in InP single crystals using a thermal baffle. For S-doped and Zn-doped InP, lower dislocation density (less than 500 cm/sup -2/) area (DF area) can be increased by using a single thermal baffle and a pBN crucible. For Sn-doped and Fe-doped InP, average dislocation densities of less than 1*10/sup 4/ cm/sup -2/ can be routinely produced by using a double thermal baffle and a pBN crucible. Pit-like unspecified defect density on InP substrates can be reduced after a long period of the melt holding before crystal growth.<>
Keywords :
III-V semiconductors; dislocation density; indium compounds; iron; sulphur; tin; zinc; InP:Fe; InP:S; InP:Sn; InP:Zn; dislocation densities; pit-like defects; semiconductor; single crystals; thermal baffle; Crystalline materials; Crystals; Doping; Epitaxial growth; Etching; Indium phosphide; MOCVD; Semiconductor materials; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235630
