Title :
Advanced technology for a new NPT-IGBT module design
Author :
Miyashita, S. ; Yoshiwatari, S. ; Kobayashi, S. ; Sakurai, K.
Author_Institution :
Matsumoto Factory, Fuji Electr. Co. Ltd., Nagano, Japan
Abstract :
This paper introduces the technologies for a newly developed 1200 V/600 A 1 in 1 NPT-IGBT module. This IGBT has low power dissipation loss, low noise, soft switching and higher reliability. These features have been realized by advanced simulation and stress analysis for 3D-structures.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device packaging; 1200 V; 3D-structures; 600 A; NPT-IGBT module design; advanced semiconductor technology; advanced simulation; noise; power IGBTs; power dissipation loss; reliability; soft switching; stress analysis; Impedance; Insulated gate bipolar transistors; Isolation technology; Motor drives; Power dissipation; Power electronics; Production facilities; Servomechanisms; Temperature; Uninterruptible power systems;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.730278
