Evidence of oxygen in undoped InAlAs MOVPE layers

Author

Buchali, F. ; Scheffer, F. ; Heedt, C. ; Gyuro, I. ; Speier, P. ; Prost, W. ; Tegude, F.J.

Author_Institution

Duisburg Univ., Germany

fYear

1992

fDate

21-24 April 1992

Firstpage

534

Lastpage

537

Abstract

InAlAs layers lattice matched to InP were grown by LP-MOVPE (low-pressure metal-organic vapor-phase epitaxy). The layers were characterized with respect to deep levels by C-V, SIMS (secondary ion mass spectroscopy) and photocapacitance measurements. Oxygen was definitely found by SIMS measurements and temperature-dependent C-V measurements as the most important defect impurity stemming from the epitaxial sources. The activation energy was determined to Delta E/sub T/=85 meV. The concentration strongly depends on the growth condition. High growth temperatures lead to low concentrations of oxygen and silicon. The lower limit is given by the quality of the precursors, the gas purifying system, and the growth conditions. Four deeper levels have been found with low concentrations with no significant influence on the layer properties.<>

Keywords

III-V semiconductors; aluminium compounds; deep levels; indium compounds; photocapacitance; secondary ion mass spectra; semiconductor growth; vapour phase epitaxial growth; C-V measurements; InAlAs; InP; MOVPE; SIMS; deep levels; growth temperatures; photocapacitance; semiconductor; Epitaxial growth; Epitaxial layers; Impurities; Indium compounds; Indium phosphide; Lattices; Mass spectroscopy; Oxygen; Silicon; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235633

Filename

235633