Title :
New intelligent power multi-chips modules with junction temperature detecting function
Author :
Kajiwara, Tamao ; Yamagaguchi, A. ; Hoshi, Yasuyuki ; Sakurai, Kenya ; Gallagher, Jerry
Author_Institution :
Matsumoto Factory, Fuji Electr. Co. Ltd., Nagano, Japan
Abstract :
A new IGBT-IPM named R-IPM has been developed. This R-IPM consists of only silicon semiconductors chips, so called IPMCMs (intelligent power multi-chip modules). The exclusive monolithic IC used in the R-IPM provides over-temperature protection by directly detecting the junction temperature T/sub j/of the IGBT chips. This new T/sub j/ detection is the first of its kind. This paper describes the R-IPM and its T/sub j/ detecting technology.
Keywords :
insulated gate bipolar transistors; integrated circuit measurement; monolithic integrated circuits; multichip modules; p-n junctions; power integrated circuits; temperature measurement; IGBT; R-IPM; intelligent power multi-chips modules; junction temperature detection; monolithic IC; over-temperature protection; radiated noise reduction; silicon semiconductors chips; Design optimization; Insulated gate bipolar transistors; Integrated circuit layout; Integrated circuit noise; Integrated circuit technology; Monolithic integrated circuits; Motor drives; Noise reduction; Silicon; Temperature;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.730282
