Cu and Ag diffused semi-insulating InP and GaAs

Author

Xie, K. ; Wie, C.R.

Author_Institution

Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

526

Lastpage

529

Abstract

High-resistivity (up to 10/sup 5/ Omega -cm) p-type GaAs was obtained by thermal diffusion of Cu and Ag in conducting n-type GaAs wafers. The electrical properties of GaAs:Cu and GaAs:Ag are governed by a deep acceptor level. The semi-insulating InP (up to 10/sup 7/ Omega -cm) could be obtained by thermal diffusion of Cu at 800 degrees C for 20 to 36 h in conducting n-type and p-type InP wafers. Photoluminescence quenching was observed in highly resistive InP:Cu. The qualitative behavior of electrical and optical properties of InP:Cu could be explained by a Cu precipitate compensation model.<>

Keywords

III-V semiconductors; copper; deep levels; diffusion in solids; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; silver; GaAs:Ag; GaAs:Cu; InP:Ag; InP:Cu; deep acceptor level; photoluminescence quenching; precipitate compensation model; resistivity; semi-insulating; semiconductors; thermal diffusion; Annealing; Gallium arsenide; Hall effect; III-V semiconductor materials; Indium phosphide; Pollution measurement; Semiconductor process modeling; Substrates; Temperature measurement; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235635

Filename

235635