Title :
Study of Schottky barrier formation in InP [110] by photoreflectance
Author :
Hwang, J.S. ; Hang, Z.
Author_Institution :
Dept. of Phys., Nat. Chengkung Univ., Tainan, Taiwan
Abstract :
The effects of using different p-InP[110] surfaces (air exposed, metal covered, and annealed) on the surface Fermi level position are studied by photoreflectance (PR). Measurements are performed on the [110] atomic clean surface under ultrahigh vacuum conditions in a molecular beam epitaxy chamber. The built-in electric field, which is associated with the barrier height, at the surface and/or metal/InP interface is evaluated from the Franz-Keldysh oscillations exhibited in the PR spectra. Schottky barrier heights of 0.21+or-0.02 eV for an atomically clean surface, 0.47+or-0.03 eV for an air exposed surface, and 0.82+or-0.05 eV for a surface annealed at 350 degrees C are found. In addition, the Schottky barrier heights for the Ag/p-InP[110] and Au/InP [(110] interfaces are found to be almost identical (0.43+or-0.04 eV and 0.47+or-0.03 eV, respectively), while for Al/p-InP[110] the barrier height is 0.60+or-0.04 eV.<>
Keywords :
Fermi level; III-V semiconductors; Schottky effect; aluminium; gold; indium compounds; photoreflectance; semiconductor-metal boundaries; silver; surface electron states; Ag-InP; Al-InP; Au-InP; Franz-Keldysh oscillations; InP; InP[110]; MBE chamber; Schottky barrier formation; atomically clean surface; barrier heights; built-in electric field; photoreflectance; semiconductors; surface Fermi level; ultrahigh vacuum; Annealing; Atomic beams; Atomic layer deposition; Atomic measurements; Gold; Indium phosphide; Molecular beam epitaxial growth; Performance evaluation; Schottky barriers; Surface cleaning;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235637
