Cryogenic noise performance of InGaAs/InAlAs/InP HEMTs

Author

Lain, R. ; Allen, B.A. ; Yang, C.C. ; Shaw, L. ; Brunone, D. ; Tan, K.L. ; Streit, D.C. ; Liu, P.H. ; Bautista, J.J. ; Ortiz, G.G.

Author_Institution

TRW Electron. & Technol. Div., Redondo Beach, CA, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

507

Lastpage

510

Abstract

The authors describe the measured cryogenic noise performance of a 0.1- mu m T-gate InP HEMT (high electron mobility transistor) operating at 30 K and a two-stage HEMT low-noise amplifier operating at 19 K. The InP HEMT achieved a noise temperature of 5-15 K when operated at 30 K and at 12-18 GHz, while the noise temperature of the two-stage amplifier decreased from 160 K to 40 K with cryogenic operation at 30-34 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; cryogenics; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; semiconductor device noise; solid-state microwave devices; 0.1 micron; 12 to 18 GHz; 19 K; 30 K; 30 to 34 GHz; HEMT; InGaAs-InAlAs-InP; cryogenic noise performance; low-noise amplifier; noise temperature; semiconductors; Cryogenics; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MODFETs; Noise measurement; Operational amplifiers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235640

Filename

235640