Title : 
A new harmonic reducing diode rectifier of capacitor input type for industrial high-voltage and high-power applications
         
        
            Author : 
Nishida, Yasuyuki ; Nakaoka, Mutsuo
         
        
            Author_Institution : 
Dept. of Electr. & Electron. Eng., Nihon Univ., Koriyama, Japan
         
        
        
        
        
        
            Abstract : 
This paper presents a new harmonic reducing rectifier that consists of the double sequential (or series) 3-phase-bridge diode-rectifier of capacitor-input type and an auxiliary circuit to reduce harmonics involved in the input line-currents. Since the new rectifier does not require a self-turn-off device nor a controller, it results in a compact, reliable and efficient solution to obtain uncontrolled DC-voltage from the utility without harmonic pollution. Additionally, the new rectifier is suitable for high-voltage high-power applications due to the double-sequential topology. In this paper, the unique arrangement and particular operation of the auxiliary circuit are introduced. Then, experimental results are shown to confirm the validity of the theory.
         
        
            Keywords : 
bridge circuits; capacitors; diodes; harmonics suppression; rectifying circuits; auxiliary circuit; capacitor input; double sequential 3-phase-bridge diode-rectifier; double-sequential topology; harmonic reducing diode rectifier; harmonic reducing rectifier; harmonics reduction; high-power applications; high-voltage applications; industrial applications; input line-currents; series 3-phase-bridge diode-rectifier; uncontrolled DC-voltage; voltage synthesis; Capacitors; Circuit topology; Diodes; Electronics industry; Pollution; Power generation economics; Power system harmonics; Pulse width modulation; Rectifiers; Voltage;
         
        
        
        
            Conference_Titel : 
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
         
        
            Conference_Location : 
St. Louis, MO, USA
         
        
        
            Print_ISBN : 
0-7803-4943-1
         
        
        
            DOI : 
10.1109/IAS.1998.730310