Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells

Author

Weinberg, I. ; Swartz, C.K. ; Drevinsky, P.J.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

194

Lastpage

197

Abstract

Defect behavior, observed by deep level transient spectroscopy (DLTS), is used to predict carrier removal and the effects of simultaneous electron irradiation and injection annealing on the performance of InP solar cells. For carrier removal, the number of holes trapped per defect is obtained from measurements of both carrier concentrations and defect concentrations during an isochronal anneal. In addition, from kinetic considerations, the behavior of a dominant defect during injection annealing is used to estimate the degradation expected from exposure to the ambient electron environment in geostationary orbit.<>

Keywords

III-V semiconductors; annealing; carrier density; deep level transient spectroscopy; electron beam effects; hole traps; indium compounds; solar cells; InP solar cells; ambient electron environment; carrier concentrations; carrier removal; deep level transient spectroscopy; defect concentrations; degradation; geostationary orbit; isochronal anneal; kinetic considerations; performance; predicted in-space injection annealing; simultaneous electron irradiation; trapped holes; Annealing; Degradation; Diodes; Electron traps; Extraterrestrial measurements; Indium phosphide; Kinetic theory; Laboratories; NASA; Photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235644

Filename

235644