DocumentCode
3308224
Title
Morphological defects in InP layers grown by gas-source molecular beam epitaxy
Author
Rakennus, K. ; Hakkarainen, T. ; Tappura, K. ; Asonen, H. ; Pessa, M.
Author_Institution
Dept. of Phys., Tampere Univ. of Technol., Finland
fYear
1992
fDate
21-24 April 1992
Firstpage
171
Lastpage
174
Abstract
InP
Keywords
III-V semiconductors; chemical beam epitaxial growth; crystal defects; crystal morphology; indium compounds; semiconductor epitaxial layers; semiconductor growth; surface structure; GSMBE; InP layers; gas-source molecular beam epitaxy; morphological defects; surface defects; Chemical technology; Indium phosphide; Inductors; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Optical microscopy; Substrates; Surface morphology; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location
Newport, RI, USA
Print_ISBN
0-7803-0522-1
Type
conf
DOI
10.1109/ICIPRM.1992.235649
Filename
235649
Link To Document