Characterization of Si- delta doped GaInAs grown by low pressure chemical vapor deposition

The properties of silicon planar doped GaInAs epilayers grown on InP by low-pressure metalorganic chemical vapor deposition are described. Magnetotransport measurements give evidence for the two-dimensional nature of the electronic structure in these delta -doped GaInAs layers and thus confirm the narrow width of such delta -doped layers as measured by secondary ion mass spectroscopy. The electron density measured by both Hall and Shubnikov de Haas methods shows a saturation at 6.6*10/sup 12/ cm/sup -2/. A crystallographic analysis, associated with transport measurements performed on these layers, suggests a solubility limit of silicon in GaInAs as low as 4*10/sup 12/ cm/sup -2/. The electron subband density was modeled versus the design parameters (silicon doses), and consistent results were obtained.<>