Title :
An ultra wideband 0.04 to 40 GHz PIN diode transfer switch
Author :
Sun, C. ; Magers, J. ; Oldfield, W. ; Simmons, R. ; Liu, E.
Author_Institution :
California Polytech. State Univ., San Luis Obispo, CA, USA
Abstract :
0.04 to 40 GHz silicon PIN diode transfer switch has been demonstrated. The transfer switch included a PIN diode switch network and an output divider network. An insertion loss of about 12 dB at 40 GHz was achieved, and a minimum isolation of 90 dB was obtained over the entire frequency range. Computer modeling results were also presented.
Keywords :
elemental semiconductors; microwave diodes; microwave switches; p-i-n diodes; semiconductor switches; silicon; 0.04 to 40 GHz; 12 dB; PIN diode switch network; Si; computer model; insertion loss; minimum isolation; output divider network; ultra wideband PIN diode transfer switch; Assembly; Diodes; Frequency; Insertion loss; Microstrip; Scattering parameters; Silicon; Switches; Switching circuits; Ultra wideband technology;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187897
